Derive an expression for the intrinsic concentration by assuming the concentrations of electrons in conduction band.
Explain the principle and working of PN junction diode.
How do you explain number of energy states per unit volume in metals based on same calculate carrier concentration in semiconductors.
Explain intrinsic and extrinsic semiconductors.
Illustrate the effect of Fermi dirac distribution function on temperature.
Deduce an expression for Density of states in 3D.
Discuss the fabrication of p-n junction diode. How does the depletion region width across a p-n junction vary in forward and reverse bias?
What are direct and indirect bandgap semiconductor? Discuss the working principle and construction of LED.
What is Hall effect? Show that the Hall coefficient is RH = VH/IB
Derive an expression for carrier concentration in intrinsic semiconductor.
What is Hall effect? Obtain an expression for Hall voltage in terms of Hall coefficient.
What is Fermi distribution function? Discuss the effect of temperature on the distribution function of electrons in a metal at different energy levels.
Show that the Fermi level lies halfway between the valence and the conduction band.
What is a Extrinsic semi conductor? Draw a labeled energy band diagram of a Extrinsic semi conductor. Obtain the expression for electron and hole concentrations in a n-type Extrinsic semiconductor.
How the position of Fermi level varies in n-type and p-type semiconductors?
What is Fermi factor? Find the temperature at which the energy level 0.025eV above the Fermi level has the occupancy probability 0.05.
At what temperature we can expect a 10 % probability that electrons in silver have an energy which is 2 % above the Fermi energy? The Fermi energy of silver is 5.5 eV.
A silicon plate of thickness 1 mm, breadth 10mm and length 100mm is placed in a magnetic field of 0.5 Wb/m2 acting perpendicular to its breadth. If 10-2 A current flows along its length. Calculate hall voltage developed. RH = 3.66 x 10-4m3/coulomb.
If RH of a specimen is 3.66x10-4 m3 c-1. find its carrier concentration.
Find the temperature at which there is 1% probability that a state with an energy 0.5 eV above the Fermi energy is occupied.
The Hall coefficient of a specimen of a doped silicon is found to be 3.66x10-4 m3/C. The resistivity of the specimen is 9.93x10-3 ohm-m. Find the mobility and density of the charge carriers, assuming single carrier conduction.
Calculate the sum of probability of an electron occupying an energy level 0.02eV below and above the Fermi level at 300K in a metal
Write the applications of LED. Alight emitting diode is made of GaAsP having a band gap of 1.9 eV. Determine the wavelength of light emitted.