Extrinsic semiconductor are obtained by adding small amount of impurities in intrinsic semiconductor. Addition of these impurities preferentially increase the carriers of any one type (either e- or h+). These impurities are called as dopants which are controlled very precisely during the manufacturing process and are also used in very small amount so that the original silicon lattice will not be disturbed.
Depending the type of dopants used, extrinsic semiconductors can be of two type
When intrinsic semiconductors are doped with pentavalent material from Group V (Eg:phosphorous, arsenic, antimony) of periodic table, we get n-type semiconductor.Phosphorous has 5 electrons, four of these electrons can easily form a bond with silicon and that lives behind one extra electron. Now this extra electron that is available can be delocalized and can be made available for conduction. So by adding phosphorous atoms, for each phosphorous atom we have created one extra electron in the system.

When intrinsic semiconductors are doped with Group III element (Eg: boron, aluminum, gallium) of periodic table, p-type semiconductors are obtained. When Boron (B) is added in a very small amount in pure Silicon, three electron of Boron form 3 bonds with 3 Si atoms shown in Fig 4. But this silicon atom has one extra electron. In order to form the bond with this silicon atom, an electron from the valence band is excited to the boron level leaving a hole behind.

Examples of extrinsic semiconductors are silicon and germanium made of impurities such as As, P, Bi, Sb, In, B, Al, etc.
b) Adding controlled impurities (doping)
b) Electrons
b) Boron (B)
a) Increases with doping
c) Just below the conduction band